Norm

ASTM F3166-16

Standard Specification for High-Purity Titanium Sputtering Target Used for Through-Silicon Vias (TSV) Metallization

54,27

Over deze norm

Status Definitief
Aantal pagina's 5
Commissie F01.17
Gepubliceerd op 01-05-2016
Taal Engels

1.1 This specification details the generic criteria requirements of high pure titanium sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advance packaging.

1.2 Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.

1.2.1 Purity Requirements: 

1.2.1.1 Metallic element impurities, and

1.2.1.2 Non-metallic element impurities.

1.2.2 Grain Size Requirements—Grain size.

1.2.3 Inner Quality Requirements—Internal defect.

1.2.4 Bonding Requirements: 

1.2.4.1 Backing plate, and

1.2.4.2 Bonding ratio.

1.2.5 Configuration Requirements: 

1.2.5.1 Dimension,

1.2.5.2 Tolerance, and

1.2.5.3 Surface roughness.

1.2.6 Appearance Requirements—Surface cleanness.

1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Details

Nederlandse titel Standard Specification for High-Purity Titanium Sputtering Target Used for Through-Silicon Vias (TSV) Metallization
Engelse titel Standard Specification for High-Purity Titanium Sputtering Target Used for Through-Silicon Vias (TSV) Metallization

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