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1.1 This specification details the generic criteria requirements of high pure copper sputtering targets used as thin film material for through-silicon vias (TSV) metallization in advanced packaging.
1.2 Sputtering target purity, grain size, inner quality, bonding, dimension, and appearance specifications are included in this specification along with references for qualification test methods. Reliability, certification, traceability, and packaging requirements are also included.
1.2.1 Purity Requirements:
220.127.116.11 Metallic element impurities, and
18.104.22.168 Non-metallic element impurities.
1.2.2 Grain Size Requirements—Grain size.
1.2.3 Inner Quality Requirements—Internal defect.
1.2.4 Bonding Requirements:
22.214.171.124 Backing plate, and
126.96.36.199 Bonding ratio.
1.2.5 Configuration Requirements:
188.8.131.52 Tolerance, and
184.108.40.206 Surface roughness.
1.2.6 Appearance Requirements—Surface cleanness.
1.3 The values stated in SI units are to be regarded as standard. No other units of measurement are included in this standard.
1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.
|Nederlandse titel||Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization|
|Engelse titel||Standard Specification for High-Purity Copper Sputtering Target Used for Through-Silicon Vias (TSV) Mettalization|