Norm

IEC 62047-25:2016 en;fr

Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

108,02

Over deze norm

Status Definitief
Aantal pagina's 45
Commissie Halfgeleiders
Gepubliceerd op 01-08-2016
Taal Engels, Frans
IEC 62047-25 specifies the in-situ testing method to measure the bonding strength of micro bonding area which is fabricated by micromachining technologies used in silicon-based micro-electromechanical system (MEMS). This document is applicable to the in-situ pull-press and shearing strength measurement of the micro bonding area fabricated by microelectronic technology process and other micromachining technology. Micro anchor, fixed on the substrate through the micro bonding area, provides mechanical support of the movable sensing/actuating functional components in MEMS devices. With the devices scaling, the bonding strength degradation, induced by defects, contaminations and thermal mismatch stress on bonding surface, becomes severer. This standard specifies an insitu testing method of the pull-press and shearing strength based on a patterned technique. This document does not need intricate instruments (such as scanning probe microscopy and nanoindenter) and to prepare the test specimen specially. Since the testing structure in this standard can be implanted in device fabrication as a standard detection pattern, this document can provide a bridge, by which the fabrication foundry can give some quantitative reference for the designer.

Details

ICS-code 31.080.99
Nederlandse titel Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area
Engelse titel Semiconductor devices - Micro-electromechanical devices - Part 25: Silicon based MEMS fabrication technology - Measurement method of pull-press and shearing strength of micro bonding area

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