Norm

NEN-EN-IEC 60749-34:2011 en

Halfgeleiders - Mechanische en klimatologische beproevingsmethoden - Deel 34: Krachtwisselingen

40,76

Over deze norm

Status Definitief
Aantal pagina's 14
Commissie Halfgeleiders
Gepubliceerd op 01-01-2011
Taal Engels
This part of IEC 60749 describes a test method used to determine the resistance of a semiconductor device to thermal and mechanical stresses due to cycling the power dissipation of the internal semiconductor die and internal connectors. This happens when lowvoltage operating biases for forward conduction (load currents) are periodically applied and removed, causing rapid changes of temperature. The power cycling test is intended to simulate typical applications in power electronics and is complementary to high temperature operating life (see IEC 60749-23). Exposure to this test may not induce the same failure mechanisms as exposure to air-to-air temperature cycling, or to rapid change of temperature using the two-fluid-baths method. This test causes wear-out and is considered destructive.

Details

ICS-code 31.080.01
Nederlandse titel Halfgeleiders - Mechanische en klimatologische beproevingsmethoden - Deel 34: Krachtwisselingen
Engelse titel Semiconductor devices - Mechanical and climatic test methods - Part 34: Power cycling
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