NEN-EN-IEC 62979:2017 en

Photovoltaic module - Bypass diode - Thermal runaway test

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Status Definitief
Aantal pagina's 13
Commissie Zonne-energiesystemen
Gepubliceerd op 01-11-2017
Taal Engels
NEN-EN-IEC 62979 provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating. This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway. The test specimens which employ P/N diodes as bypass diodes are exempted from the thermal runaway test required herein, because the capability of P/N diodes to withstand the reverse bias is sufficiently high.


ICS-code 27.160
Engelse titel Photovoltaic module - Bypass diode - Thermal runaway test



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