Norm

NEN-IEC 63068-1:2019 en

Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

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Over deze norm

Status Definitief
Aantal pagina's 23
Commissie Halfgeleiders
Gepubliceerd op 01-02-2019
Taal Engels
NEN-IEC 63068-1 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field OM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.

Details

ICS-code 31.080.99
Engelse titel Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 1: Classification of defects

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