Norm

NEN-ISO 14701:2011 en

Chemische analyse van oppervlakken - Röntgen photoelectron spectroscopie - Meten van de siliconoxidedikte

79,70

Over deze norm

Status Definitief
Aantal pagina's 15
Gepubliceerd op 01-09-2011
Taal Engels
This International Standard specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished specimens and for instruments that incorporate an Al or Mg X-ray source, a specimen stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6° cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this International Standard, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.

Details

ICS-code 71.040.40
Nederlandse titel Chemische analyse van oppervlakken - Röntgen photoelectron spectroscopie - Meten van de siliconoxidedikte
Engelse titel Surface chemical analysis - X-ray photoelectron spectroscopy - Measurement of silicon oxide thickness

Winkelwagen

Subtotaal:

Ga naar winkelwagen